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PD - 95960
IRF9321PBF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = -10V)
-30 7.2 11.2 34 -15
V m m nC A
6 6 6 * ' ' ' '
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25C)
SO-8
Applications
* Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier
Orderable part number IRF9321PBF IRF9321TRPbF
Package Type SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current
Max.
-30 20 -15 -12 -120 2.5 1.6 0.02 -55 to + 150
Units
V
f Power Dissipation f
Power Dissipation
c
A
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page 2
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1
05/11/2010
IRF9321PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge
Min.
-30 --- --- --- -1.3 --- --- --- --- --- 30 --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 0.021 5.9 9.3 -1.8 -5.9 --- --- --- --- --- 34 65 10 16 18 21 79 185 145 2590 590 360
Max.
--- --- 7.2 11.2 -2.4 --- -1.0 -150 -100 100 --- --- 98 --- --- --- --- --- --- --- --- --- --- Typ. --- ---
Units
V V/C m V mV/C A nA S nC nC ns
Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -15A VGS = -4.5V, ID = -12A VDS = VGS, ID = -50A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -12A VDS = -15V, VGS = -4.5V, ID = - 12A VGS = -10V VDS = -15V ID = -12A VDD = -30V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 19a & 19b VGS = 0V
e e
h Total Gate Charge h
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance
h Gate-to-Drain Charge h Gate Resistance h
Gate-to-Source Charge
e
Output Capacitance Reverse Transfer Capacitance Parameter
pF
VDS = -25V = 1.0MHz Max. 310 -12 Units mJ A
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
Parameter
IS ISM VSD trr Qrr
d
Min.
--- --- --- --- ---
Typ.
--- --- --- 38 24
Max.
-2.5
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
G S D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
-120 -1.2 57 36 Typ. --- --- V ns nC
TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100/s Max. 20 50
e
TJ = 25C, IF = -2.5A, VDD = -24V
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
e
f
g
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = -12A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing.
2
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IRF9321PBF
1000
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
1000
TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
-ID, Drain-to-Source Current (A)
100
10
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
1 -2.5V
-2.5V 1 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100
0.1
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.6 ID = -15A 1.4 VGS = -10V
-I D, Drain-to-Source Current (A)
100
1.2
10 TJ = 150C 1 VDS = -10V 60s PULSE WIDTH 1 2 3 4 5 T J = 25C
1.0
0.8
0.1
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= -12A
-V GS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= -24V VDS= -15V
10000 Ciss Coss 1000 Crss
VDS= -6.0V
100 1 10 -VDS, Drain-to-Source Voltage (V) 100
0
25
50
75
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9321PBF
1000
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec
100
100 T J = 150C
10 DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.01 0.1
10msec
10
T J = 25C
VGS = 0V 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -V SD, Source-to-Drain Voltage (V)
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
15
-V GS(th), Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 ID = -50A
-I D, Drain Current (A)
10
5
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
100
Thermal Response ( Z thJA ) C/W
Fig 10. Threshold Voltage vs. Temperature
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
1
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9321PBF
18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 T J = 25C T J = 125C ID = -15A
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
20
60 50 40 Vgs = -4.5V 30 20 10 0 0 20 40 60 80 100 120 -I D, Drain Current (A) Vgs = -10V
Fig 12. On-Resistance vs. Gate Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
-V GS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
1000
1200 1000 800 600 400 200 0 25 50 75
Single Pulse Power (W)
ID TOP -1.4A -2.2A BOTTOM -12A
800
600
400
200
100
125
150
0 1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T J , Junction Temperature (C)
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
D.U.T *
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
*
Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
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Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs
5
IRF9321PBF
Id Vds Vgs
L
0
DUT
20K 1K
S S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
VDS
L
I AS
RG
-V GS -20V
D.U.T
IAS
DRIVER
0.01
VDD A
tp
tp V(BR)DSS
15V
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
VDS VGS RG
RD
td(on) tr t d(off) tf
D.U.T.
VGS 10%
+
-VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 19a. Switching Time Test Circuit
6
-
V DD
90% VDS
Fig 19b. Switching Time Waveforms
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IRF9321PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
9 6 ' & ! % " $
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF9321PBF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information
Qualification level
Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)
Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2010
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